掺杂补偿;
Doping and compensation in II VI semiconductors ①
Ⅱ-VI族半导体的掺杂与补偿
Activation of Fe Doping and Electrical Compensation in Semi-Insulating InP
半绝缘InP的铁掺杂激活与电学补偿
The principle of ion doping and valence compensation was adopted to develop a new catalyst Cu-Zn-Al-Zr which was derived from traditional Cu-Zn-Al catalyst by adding a small amount of ZrO_2 for MeOH synthesis under low pressure.
在Cu-Zn-Al甲醇合成催化剂中添加适量的氧化锆助剂,制得Cu-Zn-Al-Zr催化剂及表征其特性。
简答网 · 初中英语作文
简答网 · 双语新闻
简答网 · 高考英语
简答网 · 双语娱乐资讯
简答网 · 四六级英语